dmn3200u document number: ds31188 rev. 5 - 2 1 of 5 www.diodes.com october 2013 ? diodes incorporated dmn3200u new product n-channel enhancement mode field effect transistor features ? low on-resistance ? 90 m ? @ v gs = 4.5v ? 110 m ? @ v gs = 2.5v ? 200 m ? @ v gs = 1.5v ? very low gate threshold voltage ? low input capacitance ? esd protected gate ? fast switching speed ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot-23 ? case material: molded plasti c, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminal connections: see diagram ? terminals: finish ? matte tin annealed over copper leadframe. solderable per mil-std-202, method 208 ? weight: 0.008 grams (approximate) ordering information (note 4) part number case packaging dmn3200u-7 sot-23 3000/tape & reel notes: 1. no purposely added lead. fully eu directiv e 2002/95/ec (rohs) & 2011/6 5/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more in formation about diodes incorporated?s definitions of halogen- a nd antimony-free, "green" and lead-free. 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our websit e at http://www.diodes.com /products/packages.html. marking information date code key year 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017 code u v w x y z a b c d e month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d sot-23 top view e q uivalent circuit top view source gate protection diode gate drain esd protected to 3kv d g s 32n = marking code ym = date code marking for sat (shanghai assembly/ test site) = date code marking for cat (chengdu assembly/ test site) y or = year (ex: a = 2013) m = month (ex: 9 = september) 32n ym chengdu a/t site shanghai a/t site e3 y y m 32n ym
dmn3200u document number: ds31188 rev. 5 - 2 2 of 5 www.diodes.com october 2013 ? diodes incorporated dmn3200u new product maximum ratings (@t a = +25c, unless otherwise specified.) characteristic symbol value units drain-source voltage v dss 30 v gate-source voltage v gss 8 v drain current (note 5) i d 2.2 a pulsed drain current (note 5) i dm 9 a thermal characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol value units total power dissipation (note 5) p d 650 mw thermal resistance, junction to ambient r ja 192 c/w operating and storage temperature range t j , t stg -55 to +150 c electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 6) drain-source breakdown voltage bv dss 30 ? ? v v gs = 0v, i d = 250a zero gate voltage drain current i dss ? ? 1 a v ds = 30v, v gs = 0v gate-source leakage i gss ? ? ? 5 a v gs = ? 8v, v ds = 0v on characteristics (note 6) gate threshold voltage v gs(th) 0.45 ? 1.0 v v ds = v gs , i d = 250a static drain-source on-resistance r ds (on) ? 62 70 150 90 110 200 m ? v gs = 4.5v, i d = 2.2a v gs = 2.5v, i d = 2a v gs = 1.5v, i d = 0.67a forward transfer admittance |y fs | ? 5 ? s v ds =5v, i d = 2.2a diode forward voltage (note 6) v sd ? ? 0.9 v v gs = 0v, i s = 1a dynamic characteristics (note 7) input capacitance c iss ? 290 ? pf v ds = 10v, v gs = 0v f = 1.0mhz output capacitance c oss ? 66 ? pf reverse transfer capacitance c rss ? 35 ? pf notes: 5. device mounted on fr-4 pcb, on minimum recommended pad layout on 2oz. copper pads. 6. short duration pulse test used to minimize self-heating effect. 7. guaranteed by design. no t subject to product testing.
dmn3200u document number: ds31188 rev. 5 - 2 3 of 5 www.diodes.com october 2013 ? diodes incorporated dmn3200u new product 0 1 2 3 4 5 6 7 8 9 10 fig. 2 typical transfer characteristics v , gate source voltage (v) gs i, d r ai n c u r r e n t (a) d 0 1 2 3 4 5 6 7 8 9 10 0.511.522.53 t = -55c a t = 25c a t = 85c a t = 150c a v = 5v pulsed ds fig. 3 on-resistance vs. drain current & gate voltage 0.01 0.1 1 0.01 0.1 1 10 i , drain-source current (a) d r , static drain-source on-resistance ( ) ds(on) ? v = 2.5v gs v = 1.5v gs v = 4.5v gs 0.6 0.8 1.2 1.4 1.6 1.8 1.0 fig. 5 gate threshold variation vs. ambient temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a v , gate threshold voltage (v) gs(th) 0 0.2 0.4 0.6 0.8 1.0 i = 250a d 0 5 10 15 20 25 30 fig. 6 typical total capacitance v , drain-source voltage (v) ds c , c a p a c i t an c e (p f ) c iss c oss c rss
dmn3200u document number: ds31188 rev. 5 - 2 4 of 5 www.diodes.com october 2013 ? diodes incorporated dmn3200u new product fig. 7 reverse drain current vs. source-drain voltage 0.0001 0.001 0.01 0.1 1 10 v , source-drain voltage (v) sd i, s o u r c e c u r r en t (a) s t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a 0.2 0.4 0.6 0.8 1.0 1.2 0 package outline dimensions please see ap02002 at http://www.diodes.com /datasheets/ap02002.pdf for latest version. suggested pad layout please see ap02002 at http://www.diodes.com/ datasheets/ap02002.pdf for latest version. sot23 dim min max a 0.37 0.51 b 1.20 1.40 c 2.30 2.50 d 0.89 1.03 f 0.45 0.60 g 1.78 2.05 h 2.80 3.00 j 0.013 0.10 k 0.903 1.10 l 0.45 0.61 m 0.085 0.180 ?? 0 8 all dimensions in mm dimensions value (in mm) z 3.4 g 0.7 x 0.9 y 1.4 c 2.0 e 0.9 a m j l d f b c h k g top view x e g y c z
dmn3200u document number: ds31188 rev. 5 - 2 5 of 5 www.diodes.com october 2013 ? diodes incorporated dmn3200u new product important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability ari sing out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability w hatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of t his document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2013, diodes incorporated www.diodes.com
|
